Renesas Electronics RJK4013DPE-00#J3 MOSFET

Vgs (Max): 30V

Gate Charge (Qg): 38nC

Power consumption: 100W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 400V

Continuous drain current: 17A

Input Capacitance (Ciss): 1450pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 300mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V