ROHM Semiconductor 2SAR372P5T100R BJTs - 바이폴라 트랜지스터 PNP -0.7A-120V 저주파 증폭기

Technology: Si

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 390

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: - 700 mA

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 180 mV