ROHM Semiconductor 2SC4102U3T106R BJTs - 바이폴라 트랜지스터 고전압 증폭용 트랜지스터

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 500 mV