ROHM Semiconductor 2SCR372PHZGT100Q BJTs - 바이폴라 트랜지스터 NPN 0.7A 120V 중간 전력 트랜지스터 자동차용

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 390 at 100 mA, 5 V

Gain Bandwidth Product fT: 220 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 700 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 100 mA, 5 V

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 300 mV