ROHM Semiconductor 2SCR375P5T100R BJTs - 바이폴라 트랜지스터 NPN 120V Vceo 1.5A Ic MPT3

Technology: Si

Unit Weight: 120.210 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 390 at 200 mA, 5 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 100 mV