ROHM Semiconductor 2SD2654TLW BJTs - 바이폴라 트랜지스터 TRANS GP BJT NPN 50V 0.15A 3핀

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV