ROHM Semiconductor BSM300C12P3E301 실리콘 카바이드 (SiC) 모듈 SIC 전력 모듈 초퍼

Fall Time: 30 ns

Rise Time: 35 ns

Technology: SiC

Configuration: Single

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vf - Forward Voltage: 1.6 V at 300 A

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 1.36 kW

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 170 ns

Id - Continuous Drain Current: 300 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 2.7 V