ROHM Semiconductor BSM300D12P4G101 SiC 파워 모듈 BSM300D12P4G101은 SiC-UMOSFET으로 구성된 하프 브리지 모듈입니다

Width: 62 mm

Length: 152 mm

Fall Time: 57 ns

Rise Time: 45 ns

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 925 W

Vgs - Gate-Source Voltage: - 4 V, + 21 V

Typical Turn-On Delay Time: 63 ns

Typical Turn-Off Delay Time: 270 ns

Id - Continuous Drain Current: 291 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.8 V