ROHM Semiconductor DTC124ESATP 프리바이어스 바이폴라 트랜지스터

R1/R2: 1

Mounting Type: Through Hole

Power-Maximum: 300mW

Transistor type: NPN-Prebias

Collector current: 100mA

DC electricity gain: 56@5mA@5V

Frequency-Transition: 250MHz

Resistance-Base (R1): 22kOhms

Vce Saturation (maximum): 300mV@500uA,10mA

Collector-emitter voltage: 50V

Resistance-Emitter base (R2): 22kOhms

DC current gain (hFE) (minimum): 56@5mA,5V

Current-Collector (Ic) (maximum): 30mA

Current-Collector cutoff (maximum): 500nA

Voltage-Collector-emitter breakdown (maximum): 50V