ROHM Semiconductor EM6J1T2R MOSFET 소형 신호 FET 듀얼 P채널 -20V -200mA EMT6

Fall Time: 17 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 1.4 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 150 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 17 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 200 mS

Rds On - Drain-Source Resistance: 1.2 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V