ROHM Semiconductor EMZ51T2R BJTs - 바이폴라 트랜지스터 PNP+NPN 드라이버 트랜지스터

Technology: Si

Unit Weight: 3 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 560 at 1 mA, 2 V

Gain Bandwidth Product fT: 400 MHz, 350 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 1 mA, 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 300 mV