ROHM Semiconductor MMST5086T146 BJTs - 바이폴라 트랜지스터 SMT PNP

Technology: Si

Unit Weight: 8 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 500 at 100 uA, 5 V

Gain Bandwidth Product fT: 40 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150 at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 50 mV