ROHM Semiconductor MMST5088T146 BJTs - 바이폴라 트랜지스터 SMT NPN

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

DC Current Gain hFE Max: 900 at 100 uA, 5 V

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 35 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

DC Collector/Base Gain hfe Min: 350 at 1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 300 mV