ROHM Semiconductor MMST6428T146 BJTs - 바이폴라 트랜지스터 SMT NPN

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 250 at 10 uA, 5 V

Gain Bandwidth Product fT: 700 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250

Collector- Emitter Voltage VCEO Max: 50 V