ROHM Semiconductor QH8MC5TCR MOSFETs 60V 3.0A-3.5A, 듀얼 N채널+P채널, TSMT8, 소형 신호 MOSFET

Fall Time: 3.1 ns, 43 ns

Rise Time: 4.8 ns, 10 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 3.1 nC, 17.3 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.3 ns, 9.2 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 3 A, 3.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.3 S, 4 S

Rds On - Drain-Source Resistance: 90 mOhms, 91 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V