ROHM Semiconductor QS6J3TR MOSFET 소형 신호 2P-CH 20V 1.5A

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Fall Time: 12 ns

Rise Time: 12 ns

Technology: Si

Unit Weight: 14 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 3 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 215 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 2 V