ROHM Semiconductor QS8M13TCR MOSFETs 4V 드라이브 N채널 + P채널 MOSFET

Fall Time: 7 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 10 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel, 1 P-Channel

Qg - Gate Charge: 5.5 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel, P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 6 A, 5 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 3 S

Rds On - Drain-Source Resistance: 28 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V