ROHM Semiconductor R8002CND3FRATL MOSFETs TO252 800V 2A N-CH

Fall Time: 67 ns

Rise Time: 22 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 12.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 69 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 19 ns

Typical Turn-Off Delay Time: 35 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.3 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 5.5 V