ROHM Semiconductor R8003KND3TL1 MOSFETs TO252 800V 3A N-CH MOSFET

Fall Time: 65 ns

Rise Time: 15 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 11.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 48 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 45 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.8 Ohms

Vds - Drain-Source Breakdown Voltage: 800 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V