ROHM Semiconductor RA1C030LDT5CL MOSFETs RA1C030LD는 낮은 온 저항과 고출력 패키지를 갖춘 WLCSP MOSFET으로, 스위칭 회로, 단일 셀 배터리 응용, 모바일 응용에 적합합니다.

Fall Time: 4 ns

Rise Time: 6 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 1.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 200 mV, + 7 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 15 ns

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 50 C

Rds On - Drain-Source Resistance: 140 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V