ROHM Semiconductor RF4L055GNTCR MOSFETs RF4L055GN은 스위칭에 적합한 저온 저항 전력 MOSFET입니다.

Fall Time: 21 ns

Rise Time: 17 ns

Technology: Si

Unit Weight: 771.020 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 7.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.2 ns

Typical Turn-Off Delay Time: 23 ns

Id - Continuous Drain Current: 5.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 43 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V