ROHM Semiconductor RF4P060BGTCR MOSFETs RF4P060BG는 낮은 온 저항과 고출력 소형 몰드 패키지를 갖춘 전력 MOSFET으로, 스위칭에 적합합니다.

Fall Time: 6 ns

Rise Time: 11 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7.5 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3.7 S

Rds On - Drain-Source Resistance: 78 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V