ROHM Semiconductor RJ1L12CGNTLL MOSFETs 고내정전기방전(Nch) 60V 120A 파워 MOSFET

Fall Time: 250 ns

Rise Time: 48 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 139 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 166 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 33 ns

Typical Turn-Off Delay Time: 180 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 50 S

Rds On - Drain-Source Resistance: 3.4 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V