ROHM Semiconductor RQ3E110AJTB MOSFETs RQ3E110AJ는 스위칭 애플리케이션용 저온 저항 및 소형 표면 실장 패키지 MOSFET입니다.

Fall Time: 20 ns

Rise Time: 21 ns

Technology: Si

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 13.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 15 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 21 ns

Typical Turn-Off Delay Time: 54 ns

Id - Continuous Drain Current: 24 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 9.8 S

Rds On - Drain-Source Resistance: 11.7 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V