ROHM Semiconductor RQ5C025TPTL MOSFETs RQ5C025TP는 G-S 보호 다이오드와 낮은 온 스위칭을 갖춘 MOSFET으로 스위칭에 적합합니다.

Fall Time: 20 ns

Rise Time: 18 ns

Technology: Si

Unit Weight: 12 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 7 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.3 S

Rds On - Drain-Source Resistance: 95 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 2 V