ROHM Semiconductor RV1C002UNT2CL MOSFETs Nch 소신호 MOSFET

Fall Time: 25 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 143.050 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel MOSFET

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 3 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 110 mS

Rds On - Drain-Source Resistance: 2 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V