ROHM Semiconductor RV7L020GNTCR1 MOSFETs N채널 60V 2A 중전력 MOSFET

Fall Time: 10 ns

Rise Time: 6.3 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Middle Power MOSFET

Qg - Gate Charge: 2.1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.1 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 5.9 ns

Typical Turn-Off Delay Time: 12.2 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1.4 S

Rds On - Drain-Source Resistance: 157 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.7 V