ROHM Semiconductor SCS308APC9 쇼트키 실리콘 카바이드 다이오드 3세대 SiC 쇼트키 브릿지 다이오드 650V 8A

Technology: SiC

Unit Weight: 2 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 8 A

Ir - Reverse Current: 40 uA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 57 W

Ifsm - Forward Surge Current: 67 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V