ROHM Semiconductor SH8K4TB1 MOSFETs Nch+Nch 30V 9A MOSFET

Fall Time: 22 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 15 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 55 ns

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7 S

Rds On - Drain-Source Resistance: 17 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V