ROHM Semiconductor UMT3906T106 BJTs - 바이폴라 트랜지스터 PNP 40V 0.2A

Width: 1.25 mm

Height: 0.8 mm

Length: 2 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 300 at - 10 mA, - 1 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30 at - 100 mA, - 1 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 400 mV