ROHM Semiconductor US6J12TCR MOSFETs 1.5V 드라이브 Pch+Pch MOSFET. US6J12는 스위칭 애플리케이션에 적합한 저온 저항 MOSFET입니다.

Fall Time: 25 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 7.6 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1 W

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 9 ns

Typical Turn-Off Delay Time: 80 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.3 S

Rds On - Drain-Source Resistance: 105 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V