Sanken DKI04046 Sanken_카테고리_트랜지스터,MOSFET,IGBT,어레이

Type: Power MOSFET

Vgs(th): 2.5 V

Vgs (Max): 20V

Gate Charge (Qg): 35.3nC

Power consumption: 47W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 40V

Continuous drain current: 48A

Input Capacitance (Ciss): 2410pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 5.2mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V