Stanford SIM914 전치 증폭기 (DC - 350 MHz)

Amplifier channels: 2

Inputs: 50 Ω, DC coupled

Outputs: 50 Ω, DC coupled

Bandwidth: DC to 350 MHz

Rise/fall time: 1 ns

Voltage gain: 5 per channel (14 dB)

Input noise: 6.4 nV/√Hz (typ.)

Operating range: 

  Inputs: ±200 mV

  Outputs: ±1 V

Propagation delay: 2.7 ns (typ.)

Recovery time: 3 ns for 10× overload

Input protection: ±50 V for <1 µs

Output clamp: ±1.6 V

Output overload detect: ±1.3 V

Crosstalk: -60 dB

Operating temperature: 0 °C to 40 °C (non-condensing)

Connectors: BNC (4 front) DB15 (male) SIM interface

Power: Power supplied by the SIM900 Mainframe, or optionally by a user-provided DC power supply (+/-5 V)

Dimensions: 1.5" × 3.6"× 7.0" (WHL)

Weight: 1.4 lbs.

Datasheet

Manual