STMicroelectronics 2N2222AUB1 BJTs - 바이폴라 트랜지스터 방사선 내성 50 V, 0.8 A NPN 트랜지스터 - 엔지니어링 모델

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 730 mW

DC Current Gain hFE Max: 300

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 800 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 2.5

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV