STMicroelectronics A2P75S12M3 IGBT 모듈 ACEPACK 2 식스팩 토폴로지, 1200 V, 75 A 트렌치 게이트 필드-스톱 IGBT M 시리즈, s

Technology: Si

Unit Weight: 42 g

Configuration: 6-Pack

Mounting Style: Through Hole

Pd - Power Dissipation: 454.5 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.95 V

Continuous Collector Current at 25 C: 75 A