STMicroelectronics BUL1203E BJTs - 바이폴라 트랜지스터 N 채널 550V 5A 전력 트랜스

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 100 W

Emitter- Base Voltage VEBO: 9 V

Collector- Base Voltage VCBO: 1.2 kV

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 550 V

Collector-Emitter Saturation Voltage: 1.5 V