STMicroelectronics BUL128D-B BJTs - 바이폴라 트랜지스터 고전압 고속 스위칭 NPN 파워 트랜지스터

Width: 4.6 mm

Height: 15.75 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 70 W

Emitter- Base Voltage VEBO: 9 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1.5 V