STMicroelectronics BUTW92 BJTs - 바이폴라 트랜지스터 NPN 고전류 고속

Width: 5.15 mm

Height: 20.15 mm

Length: 15.75 mm

Technology: Si

Unit Weight: 6.500 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 180 W

DC Current Gain hFE Max: 65

Emitter- Base Voltage VEBO: 7 V

Continuous Collector Current: 60 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 9

Collector- Emitter Voltage VCEO Max: 250 V

Collector-Emitter Saturation Voltage: 800 mV