STMicroelectronics SCT1000N170 SiC MOSFETS 실리콘 카바이드 파워 MOSFET 1700 V, 1.0 옴 typ 7 A

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 14 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 120 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1 Ohms

Vds - Drain-Source Breakdown Voltage: 1.7 kV

Vgs th - Gate-Source Threshold Voltage: 2.1 V