STMicroelectronics SCT50N120 SiC MOSFETS 실리콘 카바이드 파워 MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C)

Technology: SiC

Unit Weight: 4.500 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 122 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 318 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Id - Continuous Drain Current: 65 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 52 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V