STMicroelectronics ST13007D BJTs - 바이폴라 트랜지스터 고전압 고속 스위칭 NPN 파워 트랜지스터

Width: 4.6 mm

Height: 15.75 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

Emitter- Base Voltage VEBO: 9 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 18 at 2 A, 5 V, 8 at 5 A, 5 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 2 V