STMicroelectronics STB47N60DM6AG MOSFETs 자동차용 등급 N채널 600 V, 70 mOhm 전형 36 A MDmesh DM6 파워 MOSFET

Fall Time: 9 ns

Rise Time: 5.5 ns

Technology: Si

Unit Weight: 1.380 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 55 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 25 V, + 25 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 57 ns

Id - Continuous Drain Current: 36 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 80 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3 V