STMicroelectronics STF12N120K5 MDmesh K5 N-채널 1200 V, 0.62 옴 typ 12 A MDmesh K5 파워 MOSFET

Width: 10.4 mm

Height: 4.6 mm

Length: 16.4 mm

Fall Time: 18.5 ns

Rise Time: 11 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 44.2 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 23 ns

Typical Turn-Off Delay Time: 68.5 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 620 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5 V