STMicroelectronics STGAP2GSNCTR 게이트 드라이버 갈바닉 절연 3A 단일 게이트 드라이버 강화 모드 GaN FET용

Shutdown: Shutdown

Fall Time: 30 ns

Rise Time: 30 ns

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Input Voltage - Max: 5.5 V

Input Voltage - Min: 3.1 V

Supply Voltage - Max: 5.5 V

Supply Voltage - Min: 3.1 V

Propagation Delay - Max: 93 ns

Maximum Turn-On Delay Time: 93 ns

Maximum Turn-Off Delay Time: 93 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 1.5 Ohms