STMicroelectronics STGAP2SICSC SiC MOSFET용 갈바닉 절연 4A 싱글 게이트 드라이버 하프 브리지

Fall Time: 30 ns

Rise Time: 30 ns

Technology: SiC

Unit Weight: 150 mg

Configuration: Non-Inverting

Mounting Style: SMD/SMT

Output Current: 4 A

Isolation Voltage: 5 kV

Number of Drivers: 1 Driver

Number of Outputs: 1 Output

Moisture Sensitive: Yes

Supply Voltage - Max: 5.5 V

Supply Voltage - Min: 3 V

Propagation Delay - Max: 90 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C