STMicroelectronics STGAP2SICSNTR 갈바닉 절연 게이트 드라이버 SiC MOSFET용 갈바닉 절연 4A 단일 게이트 드라이버

Shutdown: Shutdown

Fall Time: 30 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 80 mg

Mounting Style: SMD/SMT

Output Current: 4 A

Number of Drivers: 1 Driver

Number of Outputs: 1 Output

Moisture Sensitive: Yes

Supply Voltage - Max: 5.5 V

Supply Voltage - Min: 3.1 V

Propagation Delay - Max: 90 ns

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C