STMicroelectronics STGD6NC60HDT4 IGBT 트랜지스터 PowerMESH" IGBT

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 350 mg

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 63 W

Continuous Collector Current: 6 A

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 15 A

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 15 A