STMicroelectronics STGF30V60DF IGBT 트랜지스터 IGBT 및 파워 바이폴라

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 260 W

Continuous Collector Current: 60 A

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 60 A

Collector-Emitter Saturation Voltage: 2.3 V

Continuous Collector Current at 25 C: 60 A