STMicroelectronics STGIPQ3H60T-HZ SiC IGBT 모듈 SLLIMM nano 2세대 시리즈 IPM, 3 A, 600 V, 3상 IGBT 인버터 브리지

Technology: SiC

Unit Weight: 4 mg

Configuration: Half Bridge

Mounting Style: Through Hole

Maximum Operating Temperature: + 175 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 3 A