STMicroelectronics STGP3NC120HD IGBT 트랜지스터 7A 1200V 매우 빠른 IGBT 파워 바이폴라

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 75 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 14 A

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 14 A